| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -12V |
| 最大漏极电流IdDrain Current | -2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 250mΩ@ VGS = -2.5V, ID = -1A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.7~-2V |
| 耗散功率PdPower Dissipation | 1W |
| Description & Applications | 2.5V Drive Pch MOS FET Features 1) Low on-resistance. 2) High power package. 3) High speed switching. 4) Low voltage drive. Applications DC-DC converter |
| 描述与应用 | 2.5V驱动P沟道MOS FET 特点 1）低导通电阻。 2）高功率封装。 3）高速开关。 4）低电压驱动。 应用 DC-DC转换 |