| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 6V/-6V |
| 集电极连续输出电流IC Collector Current(IC) | 200mA/-200mA |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 150~500 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 300mV/-300mV |
| 耗散功率Pc Power Dissipation | 150mW |
| Description & Applications | Features •Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type •Each transistor elements are independent. •Mini package for easy mounting APPLICATION •For low frequency amplify application |
| 描述与应用 | 特点 •复合晶体管低频放大应用硅外延型 •每个晶体管的元素是独立的。 •易于安装的小型封装 应用 •对于低频放大应用 |