| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 450MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 50mV~200mV |
| 耗散功率PcPower Dissipation | 250mW/0.25W |
| Description & Applications | 40 V low VCEsat NPN transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat leads • Enhanced performance over SOT23 general purpose transistors. APPLICATIONS • General purpose switching and muting • Low frequency driver circuits • Audio frequency general purpose amplifier applications • Battery driven equipment (mobile phones, video cameras, hand-held devices). DESCRIPTION NPN low VCEsat transistor in a SC-89 (SOT490) plasticpackage. |
| 描述与应用 | 40 V低VCEsat NPN晶体管 特点 •低集电极 - 发射极饱和电压 •高电流能力 •改进的热行为由于平坦的线索， •增强的性能超过SOT23通用 晶体管。 应用 •通用开关和静音 •低频驱动电路 •音频通用放大器应用 •电池驱动设备（移动电话，视频 相机，手持设备）。 说明 NPN低VCEsat 在SC-89（SOT490）塑料晶体管包。 |