| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 13V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 5V |
| 集电极连续输出电流ICCollector Current(IC) | 35mA |
| 截止频率fTTranstion Frequency(fT) | 20Mhz~25Mhz |
| 直流电流增益hFEDC Current Gain(hFE) | 130~260 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 175mW/0.175W |
| Description & Applications | •NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz • LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance • Pb Free |
| 描述与应用 | •NEC的NPN硅锗高频三极管 高击穿电压的SiGe技术 VCEO= 5 V（绝对最大值） •低噪声系数： NF= 0.9 dB，在2吉赫 NF= 1.3 dB，在5.2 GHz的 •最大稳定增益： MSG =22.5分贝在2 GHz •超薄M05包装： SOT-343的足迹，与仅为0.59毫米的高度 单位领导风格更好RF性能 •无铅 |