| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
10V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
5V |
| 集电极连续输出电流IC Collector Current(IC) |
40mA |
| 直流电流增益hFE DC Current Gain(hFE) |
80~160 |
| 截止频率fT Transtion Frequency(fT) |
10GHZ |
| 耗散功率Pc Power Dissipation |
0.1W |
| Description & Applications |
Features • Transistors silicon NPN Epitaxial Planar type • Two devices are built in to the super-thin and extreme super mini (6 pins) package:ES6
VHF~UHF BAND LOW NOISE AMPLIFIER
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| 描述与应用 |
特点 •晶体管NPN硅外延平面型 •两个设备都建在到超薄和极端超迷你（6针）包装：ES6的
甚高频~ UHF波段低噪声放大器
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