| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -12V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流ICCollector Current(IC) | −200mA/-0.2A |
| 截止频率fTTranstion Frequency(fT) | 500MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 30~120 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −600mV/-0.6V |
| 耗散功率PcPoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP epitaxial planar transistor PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. |
| 描述与应用 | PNP外延平面晶体管 PNP开关晶体管 该设备是专为非常高的速度饱和集电极电流为100 mA开关。 |