| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流ICCollector Current(IC) | -3A |
| 截止频率fTTranstion Frequency(fT) | 140MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −600mV/-0.6V |
| 耗散功率PcPoWer Dissipation | 2W |
| Description & Applications | PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR Features • Low Saturation Voltage • Complementary Type FZT651 |
| 描述与应用 | PNP硅平面高性能晶体管 特点 •低饱和电压 •互补型FZT651 |