| 最大源漏极电压VdsDrain-Source Voltage |
-30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage |
20V |
| 最大漏极电流IdDrain Current |
-3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance |
270mΩ@ VGS = -4V, ID = -0.5A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage |
-1~-2.5V |
| 耗散功率PdPower Dissipation |
1.6W |
| Description & Applications |
P-Channel MOS Silicon FET Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive |
| 描述与应用 |
P沟道MOS硅FET 超高速开关应用 特点 ·低导通电阻。 ·超高速开关。 ·4V驱动器 |