| 最大源漏极电压VdsDrain-Source Voltage | 9V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -6V |
| 漏极电流(Vgs=0V)IDSSDrain Current | 1.2A-2.4A |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -2.8V |
| 耗散功率PdPower Dissipation | 3.5W |
| Description & Applications | GaAs FET.
* Power amplifier for mobile phones
* For frequencies from 400 MHz to 2.5 GHz
* Wide operating voltage range: 2.7 to 6 V
* POUT at VD=3V, f=1.8GHz 28.5 dBm typ.
* High efficiency better 55 % |
| 描述与应用 | 砷化镓场效应管. 用于移动电话的电源放大器, 使用频率从400 MHz至2.5 GHz ,宽工作电压范围：2.7至6 V 高效率，高于55％. |