| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流ICCollector Current(IC) | −600mA/- 0.6A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 30 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -1.6V |
| 耗散功率PcPoWer Dissipation | 250mW/0.25W |
| Description & Applications | silicon planar epitaxial transistors PNP silicon transistor，in a microminiature plastic envelope ，intended for medium power switching and general purpose amplifier application in trick and thin-film circuits |
| 描述与应用 | 硅平面外延晶体管 PNP硅晶体管，在一个超小型的塑料外壳，适用于中等功率开关和通用放大器应用中厚膜和薄膜电路 |