| 最大源漏极电压Vds Drain-Source Voltage | 200V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 550mA/0.55A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.0025Ω/Ohm @750mA,10v |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-2V |
| 耗散功率Pd Power Dissipation | 1.5W |
| Description & Applications | N-channel enhancement mode vertical D-MOS transistor Direct interface to C-MOS, TTL,etc. • High-speed switching • No secondary breakdown. |
| 描述与应用 | N沟道增强模式 垂直D-MOS晶体管 直接接口的C-MOS，TTL，等等 •高速开关 •无二次击穿 |