| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流ICCollector Current(IC) | −35mA |
| 截止频率fTTranstion Frequency(fT) | 4GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | |
| 耗散功率PcPoWer Dissipation | 300mW/0.3W |
| Description & Applications | PNP 4 GHz wideband transistor FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. APPLICATION It is intended as a general purpose transistor for wideband applications up to 2 GHz. |
| 描述与应用 | PNP4 GHz的宽带晶体管 特点 •高功率增益 •黄金金属确保卓越的可靠性 •SOT323（S-迷你）封装。 应用 它的目的是作为一个通用的晶体管为高达2 GHz的宽带应用。 |