| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30v |
| 最大漏极电流Id Drain Current | |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications |
| 描述与应用 | 硅N沟道MOSFET三极管 对于高达300 MHz的高频阶段 最好是在FM应用 |