| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 32V |
| 集电极连续输出电流ICCollector Current(IC) | 800mA/0.8A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 250~630 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 700mV/0.7V |
| 耗散功率PcPower Dissipation | 300mW/0.3W |
| Description & Applications | General Purpose Transistor NPN Silicon Features • Pb−Free Package is Available |
| 描述与应用 | 通用晶体管 NPN硅 特点 •无铅包装 |