| 最大源漏极电压VdsDrain-Source Voltage | 30v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -30v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 2~6ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.1~-1.5v |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | •Silicon N-Channel Junction FET •For low-frequency amplification •High mutual conductance gm •Low noise type |
| 描述与应用 | •硅N沟道结型场效应管 •对于低频放大 •高互导GM •低噪音型 |