| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 25V |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.4-2.4V |
| 耗散功率Pd Power Dissipation | 3W |
| Description & Applications | TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Features RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS型 RF功率MOSFET VHF和UHF频带功率放大器 特性 RF功率MOSFET VHF和UHF频带功率放大器 |