| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 7V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 18Ω/Ohm @10mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.9-1.5V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | N-Channel MOS FET FOR SWITCHING Features N-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 3V power supply Has low gate leakage current,it is suitable for filter circuit |
| 描述与应用 | N沟道MOS FET的切换 特性 N沟道MOS FET作开关 直接被带有3V电源的IC驱动 具有低栅极泄漏电流，这是适用于滤波电路 |