| 最大源漏极电压VdsDrain-Source Voltage | -300V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 6.0Ω -500mA,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -2.0--4.0V |
| 耗散功率PdPower Dissipation | 20W |
| Description & Applications | Silicon P-Channel MOS FET High speed power switching applications Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators |
| 描述与应用 | 硅P沟道MOS FET 高速功率开关应用 低导通电阻 高速开关 低驱动电流 无二次击穿 适用于开关稳压器，DC-DC转换器的和超声功率振荡器 |