| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 150V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 150V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 185~330 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 1V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | *Silicon NPN epitaxial planer type *For high breakdown voltage low-frequency and low-noise amplification Features *High collector to emitter voltage VCEO. *Low noise voltage NV. |
| 描述与应用 | * NPN硅外延平面型 *对于高击穿电压的低频和低噪声 放大 特点 *高集电极到发射极电压VCEO。 *低噪声电压NV。 |