| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 12.6GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 80~160 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | Silicon NPN Epitaxial VHF / UHF wide band amplifier Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz |
| 描述与应用 | NPN硅外延 VHF/ UHF宽频带放大器 特点 •优秀的互调特性 •高功率增益和低噪声系数; PG=16分贝。 NF=1.1分贝。f =900MHz时 |