| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 16V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 8V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 9Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 90~180 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | Features •NPN Epitaxial Planar Silicon Transistor •VHF to UHF Wide-Band Low-Noise Amplifier Applications •Low noise : NF=1.2dB typ (f=1GHz). •High gain : S21e2=13dB typ (f=1GHz). •High cutoff frequency : fT=9.0GHz typ. |
| 描述与应用 | 特点 •NPN平面外延硅晶体管 •VHF，UHF宽带低噪声放大器的应用 •低噪音：NF=1.2分贝典型值（F =1GHz的）。 •高增益：S21E2=13分贝典型值（F =1GHz的）。 •高截止频率：：FT =9.0GHZ典型。 |