| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流ICCollector Current(IC) |
100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) |
250MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
150mV/0.15V |
| 耗散功率PcPower Dissipation |
200mW/0.2W |
| Description & Applications |
Features • NPN SILICON EPITAXIAL TRANSISTOR • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = 50 V |
| 描述与应用 |
特点 •NPN硅外延晶体管 •高直流电流增益：HFE2=200 TYP。 •高电压：VCEO= 50 V |