| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 2A |
| 截止频率fTTranstion Frequency(fT) | 260MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 1500 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 110mV/0.11V |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | NPN epitaxial planer Silicon transistor High-hFE,AF Amp Applications Adoption of MBIT process High DC current gain Large current capacity Low collector to emitter saturation voltage |
| 描述与应用 | NPN外延刨床硅的晶体管 高HFE，AF放大器应用 通过MBIT过程 高直流电流增益 电流容量大 集电极到发射极饱和电压低 |