| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流ICCollector Current(IC) |
200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) |
750MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
100~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
150mV/0.15V |
| 耗散功率PcPower Dissipation |
150mW/0.15W |
| Description & Applications |
HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR |
| 描述与应用 |
高速开关 NPN硅外延晶体管 |