| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 30mA |
| 截止频率fTTranstion Frequency(fT) | 4GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 90mV |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | SILICON TRANSISTOR UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD High Gain Bandwidth Procuct Low Collector to Base Time Constant Low Output Capacitance; Cob = 1.5 pF |
| 描述与应用 | 硅晶体管 UHF振荡器和UHF混频器NPN硅外延晶体管MINI模具 超高频振荡器和超高频混频器 高增益带宽的替代产品 低集电极到基极时间常数 低输出电容; COB=1.5 pF |