| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流ICCollector Current(IC) | 20mA |
| 截止频率fTTranstion Frequency(fT) | 650MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors TV VHF RF amplifier applications High gain Low noise Excellent forword AGC characteristics |
| 描述与应用 | NPN硅外延晶体管 电视高频射频放大器应用 高增益 低噪音 优秀前置AGC特性 |