| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 19V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 1.1GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~270 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon epitaxial planer type RF amplifier Features Low noise figure High transister frequency Low collector to base time constant and high gain Excellent noise response |
| 描述与应用 | NPN硅外延平面型 RF放大器 特点 低噪声系数 高型晶体管频率 基本时间常数和高增益低集电极 出色的噪声响应 |