| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 35V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 18V |
| 集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) | 4GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 30~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2954 is an NPN epitaxial silicon transistor, designed for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV band. FEATURES Low Noise and High Gain. Large PT in Small Package. |
| 描述与应用 | NPN硅外延晶体管 说明 2SC2954 NPN外延硅晶体管，为低噪声宽带放大器和振荡缓冲放大器、VHF和CATV频带而设计。 特点 低噪声和高增益。 小包装的大PT。 |