| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 35V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 100~400MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~240 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors High Frequency Amplifier Applications High power gain Recommended for FM IF,OSC stage and AM CONV.IF stage |
| 描述与应用 | NPN硅外延晶体管 高频率放大器应用 高功率增益 推荐用于FM IF，OSC阶段AM CONV.IF阶段 |