| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 250mV/0.25V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors
. Audio frequency general purpose amplifier applications.
Features:
. High voltage and high current
. Excellent hFE linearity
. High hFE
. Low noise
. Small package
. Complementary to 2SA1162 |
| 描述与应用 | NPN硅外延晶体管, 音频通用放大器.
特点: 高电压和高电流, 优秀HFE线性, 高HFE, 低噪音 小型封装, 互补2SA1162. |