| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 82~180 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | High-frequency Amplifier Transistor Features Low collector capacitance. Low rbb, high gain, and excellent noise characteristics. |
| 描述与应用 | 高频晶体管放大器 特点 低集热电容。 RBB低，高增益和优良的噪音特性。 |