| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流ICCollector Current(IC) |
200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) |
500MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
90~180 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
250mV/0.25V |
| 耗散功率PcPower Dissipation |
200mW/0.2W |
| Description & Applications |
NPN Silicon epitaxial Transistors High speed switching Features High speed |
| 描述与应用 |
NPN硅外延晶体管 高速开关 特点 高速 |