| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−25V |
| 集电极连续输出电流ICCollector Current(IC) |
-1A |
| 截止频率fTTranstion Frequency(fT) |
110MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
-250mV/-0.25V |
| 耗散功率PcPoWer Dissipation |
2W |
| Description & Applications |
PNP silicon epitaxial transistor power mini mold low collector saturation voltage； excellent DC current gain linearity； complementary to 2SD999 |
| 描述与应用 |
PNP硅外延晶体管电源小型模具 低集电极饱和电压; 优良的直流电流增益线性度; 2SD999互补 |