| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-400V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
-400V |
| 集电极连续输出电流ICCollector Current(IC) |
−500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) |
12MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
120~270 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
-1000mV/-1V |
| 耗散功率PcPoWer Dissipation |
500mW/0.5W |
| Description & Applications |
Features high breakdown voltage； low Vce； high switching speed |
| 描述与应用 |
特点 击穿电压高; 低Vce; 高开关速度 |