| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 140MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~560 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 150mW/0.15W |
| Description & Applications | General Purpose Transistor Features • Reduces Board Space • High hFE, 210−460 (typical) • Low VCE(sat) < 0.5 V • Available in 8 mm, 7−inch/3000 Unit Tape and Reel |
| 描述与应用 | 通用晶体管 特点 •缩小板级空间 •高HFE，210-460（典型值） •低VCE（sat）<0.5 V |